Investigation of InPxSb1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: InPxSb1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds InP and InSb by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the InPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of InPxSb1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties.

3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.

4) In the present work, the solid solutions belonging to InPxSb1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials.

5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds.

6) Doping of P component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications

8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for InPxSb1-x III-V Ternary Semiconductor.

9) The fair agreement between calculated and reported values of Band Energy Gaps of InP and InSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10) The present work opens new line of approach to Band Energy Gap studies in InPxSb1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate InPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is InPxSb1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of InPxSb1-x III-V Ternary Semiconductor X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound

InPxSb1-x XM value 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value 1.9 1.919111 1.928739 1.938415 1.948139 1.957913 1.967735 1.977606 1.987528 1.997498 (XM/XN)2 0.800554 0.784689 0.776875 0.769138 0.761479 0.753896 0.746388 0.738955 0.731596 0.724311 (XM-XN)2 0.04 0.04801 0.052322 0.056842 0.061573 0.066519 0.071682 0.077065 0.082672 0.088505

2(XM-XN)2 1.028114 1.033838 1.036932 1.040186 1.043603 1.047187 1.050941 1.05487 1.058978 1.063268 (2(XM-XN)2)1/4 1.006956 1.008354 1.009108 1.009899 1.010727 1.011594 1.012499 1.013444 1.014429 1.015455 28.8/(2(XM-XN)2)1/4 28.60106 28.56139 28.54006 28.51772 28.49434 28.46993 28.44447 28.41795 28.39035 28.36167

ALPHA-M 134.69 130.255 128.0375 125.82 123.6025 121.385 119.1675 116.95 114.7325 112.515 RO-VALUES 5.775 5.6765 5.62725 5.578 5.52875 5.4795 5.43025 5.381 5.33175 5.2825 M-VALUES 236.58 227.501 222.9615 218.422 213.8825 209.343 204.8035 200.264 195.7245 191.185

ALPHA-M*RO/M 3.28783 3.250063 3.231495 3.213156 3.19506 3.177222 3.159659 3.142392 3.125439 3.108824

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.29E+24 8.2E+24 8.15E+24 8.1E+24 8.06E+24 8.01E+24 7.97E+24 7.92E+24 7.88E+24 7.84E+24 1-(4PIN/3)*ALPHAM*RO/M 8.29E+24 8.2E+24 8.15E+24 8.1E+24 8.06E+24 8.01E+24 7.97E+24 7.92E+24 7.88E+24 7.84E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.66E+25 1.64E+25 1.63E+25 1.62E+25 1.61E+25 1.6E+25 1.59E+25 1.58E+25 1.58E+25 1.57E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.30053 14.2807 14.27003 14.25886 14.24717 14.23497 14.22224 14.20897 14.19518 14.18083

Eg value 8.412437 8.055992 7.885757 7.720592 7.560315 7.40475 7.25373 7.107096 6.964693 6.826373

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 XN value 2.007519 2.01759 2.027712 2.037885 2.048108 2.058383 2.068709 2.079087 2.089517 2.1

(XM/XN)2 0.717098 0.709957 0.702887 0.695887 0.688957 0.682096 0.675303 0.668578 0.66192 0.655329 XM-XN -0.30752 -0.31759 -0.32771 -0.33788 -0.34811 -0.35838 -0.36871 -0.37909 -0.38952 -0.4 (XM-XN)2 0.094568 0.100864 0.107395 0.114166 0.121179 0.128438 0.135946 0.143707 0.151724 0.16

2(XM-XN)2 1.067746 1.072415 1.077281 1.082349 1.087624 1.09311 1.098813 1.10474 1.110896 1.117287 (2(XM-XN)2)1/4 1.016522 1.017632 1.018784 1.01998 1.021221 1.022506 1.023837 1.025215 1.02664 1.028114 28.8/(2(XM-XN)2)1/4 28.33189 28.301 28.26898 28.23584 28.20154 28.16609 28.12947 28.09166 28.05267 28.01246

ALPHA-M 110.2975 108.08 105.8625 103.645 101.4275 99.21 96.9925 94.775 92.5575 90.34 RO-VALUES 5.23325 5.184 5.13475 5.0855 5.03625 4.987 4.93775 4.8885 5.83925 4.79 M-VALUES 186.6455 182.106 177.5665 173.027 168.4875 163.948 159.4085 154.669 150.3295 145.79 ALPHA-M*RO/M 3.092571 3.076707 3.061261 3.046268 3.031763 3.017788 3.004386 2.995478 3.595212 2.968164

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.8E+24 7.76E+24 7.72E+24 7.68E+24 7.64E+24 7.61E+24 7.58E+24 7.55E+24 9.07E+24

7.48E+24 1-(4PIN/3)*ALPHAM*RO/M 7.8E+24 7.76E+24 7.72E+24 7.68E+24 7.64E+24 7.61E+24 7.58E+24 7.55E+24 9.07E+24 7.48E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.56E+25 1.55E+25 1.54E+25 1.54E+25 1.53E+25 1.52E+25 1.52E+25 1.51E+25 1.81E+25 1.5E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.16594 14.1505 14.13449 14.11792 14.10077 14.08304 14.06473 14.04583 14.02633 14.00623

Eg value 6.691995 6.561423 6.434525 6.311177 6.191258 6.074652 5.961247 5.850938 5.743622 5.639198

Doping of P component in a Binary semiconductor like InSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of InPxSb1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future.

2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications.

2) Limited theoretical work on Electro Negativity values and Band Energy Gap of InPxSb1-x III-V Ternary Semiconductors with in the Composition range of (03) Our results regarding the Electro Negativity values and Band Energy Gap of III-V Ternary Semiconductors are found to be in reasonable agreement with the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

References: 1) IUPAC Gold Book internet edition: "Electronegativity".

2) Pauling, L. (1932). "The Nature of the Chemical Bond. IV. The Energy of Single Bonds and the Relative Electronegativity of Atoms". Journal of the American Chemical Society 54 (9): 3570–3582..

3) Pauling, Linus (1960). Nature of the Chemical Bond. Cornell University Press. pp. 88–107. ISBN 0801403332

. 4) Greenwood, N. N.; Earnshaw, A. (1984). Chemistry of the Elements. Pergamon. p. 30. ISBN 0-08-022057-6.

5) Allred, A. L. (1961). "Electronegativity values from thermochemical data". Journal of Inorganic and Nuclear Chemistry 17 (3–4): 215–221..

6) Mulliken, R. S. (1934). "A New Electroaffinity Scale; Together with Data on Valence States and on Valence Ionization Potentials and Electron Affinities". Journal of Chemical Physics 2: 782–793..

7) Mulliken, R. S. (1935). "Electronic Structures of Molecules XI. Electroaffinity, Molecular Orbitals and Dipole Moments". J. Chem. Phys. 3: 573–585..

8) Pearson, R. G. (1985). "Absolute electronegativity and absolute hardness of Lewis acids and bases". J. Am. Chem. Soc. 107: 6801..

9) Huheey, J. E. (1978). Inorganic Chemistry (2nd Edn.). New York: Harper & Row. p. 167.

10) Allred, A. L.; Rochow, E. G. (1958). "A scale of electronegativity based on electrostatic force". Journal of Inorganic and Nuclear Chemistry 5: 264..

11) Prasada rao., K., Hussain, O.Md., Reddy, K.T.R., Reddy, P.S., Uthana, S., Naidu, B.S. and Reddy, P.J., Optical Materials, 5, 63-68 (1996).

12) Ghosh, D.K., Samantha, L.K. and Bhar, G.C., Pramana, 23(4), 485 (1984).

13) CRC Handbook of Physics and Chemistry, 76th edition.

14) Sanderson, R. T. (1983). "Electronegativity and bond energy". Journal of the American Chemical Society 105: 2259

15) Murthy, Y.S., Naidu, B.S. and Reddy, P.J., “Material Science &Engineering,”B38, 175 (1991)

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