05/22/12 -- MarketResearch.com hasannounced the addition of the new report "Power Discretes Market to2016 - Energy Efficiency Initiatives in the Power Sector toIncrease Market Demand," to their collection of Electronics marketreports. For more information, visit GBI-Research-v3759/Power-Discretes-Energy-Efficiency-Initiatives-6927079/ Cloud computing and carbon emissions controls will see theextinction of the silicon semiconductor, as the power discretesmarket demands superior products, according to the new report. The report shows that substrate technologies used in themanufacturing of power discretes have recently evolved, offeringimproved efficiency for the booming technology and power markets. Silicon (Si) was the only material originally used to produce powersemiconductors. However, this has extended to include SiliconCarbide (SiC), gallium nitride on silicon (GaN-on-Si), GalliumNitride (GaN), and Gallium arsenide (GaAs), which offer improvedperformance. |
This change in substrate technology facilitates systems to usehigher levels of power, a wider bandwidth, and perform with betterefficiency than normally obtained by conventional siliconsolutions. Businesses with continuously running applications are demandinginfrastructure in the form of cloud computing or data centers,which maintain the integrity and functionality of the hostedcomputer environment. To enable more efficient and robust systems, data centers and UPSsystems are built with high-performance semiconductor componentssuch as IGBTs and Super-Junction power MOSFETs. As the business fordatacenters increases, so does for that for power semiconductors. Demand for energy-efficient and environmentally friendly productsis driving the growth of the current power discretes market.Government policies focused on the need to save energy and reduceenergy consumption, costs and emissions are improving energyefficiency.
At the 2008 G8 summit, member nations agreed to reduce globalemissions by at least 50% before 2050. Electrically operatedvehicles will require inverter control of acceleration anddeceleration, increasing the demand for power discretes, as IGBTsand MOSFETs are the predominant power semiconductors used in thissegment. However, taxation and foreign production threatens the Europeanpower discretes market. Since 1999, packaged IGBT devices wereimported by European nations, with a duty free rate applied to theimports. EU authorities have now changed this duty exemptionthrough the reclassification of the devices, demanding import taxat 2-3%.
This duty rate represents a significant cost restraint forthe IGBT market due to the high volume of imports, and thesignificant predicted losses to both suppliers' and buyers' profitmargins will therefore increase the cost of various electronicdevices produced in the EU. The sales revenue of power discretes is forecast to grow at aCompound Annual Growth Rate (CAGR) of 6.5% during 2012-2016. For more information, visit GBI-Research-v3759/Power-Discretes-Energy-Efficiency-Initiatives-6927079/ About MarketResearch.com MarketResearch.com is the leading provider of global marketintelligence products and services. With research reports from morethan 720 top consulting and advisory firms, MarketResearch.comoffers instant online access to the world's most extensive databaseof expert insights on global industries, companies, products, andtrends. Moreover, MarketResearch.com's Research Specialists havein-depth knowledge of the publishers and the various types ofreports in their respective industries and are ready to provideresearch assistance.
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