Investigation of GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: GaPxSb1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds GaP and GaSb by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties.

3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.

4) In the present work, the solid solutions belonging to GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro

Negativity of these materials. 5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds.

6) Doping of P component in a Binary semiconductor like GaSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications

8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for GaPxSb1-x III-V Ternary Semiconductor.

9) The fair agreement between calculated and reported values of Band Energy Gaps of GaP and GaSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10) The present work opens new line of approach to Band Energy Gap studies in GaPxSb1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is GaPxSb1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of AlAsxSb1-x III-V Ternary Semiconductor X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound

GaPxSb1-x XM value 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 XN value 1.9 1.919111 1.928739 1.938415 1.948139 1.957913 1.967735 1.977606 1.987528 1.997498

(XM/XN)2 0.897507 0.87972 0.87096 0.862286 0.853699 0.845198 0.836781 0.828448 0.820198 0.81203 XM-XN -0.1 -0.11911 -0.12874 -0.13841 -0.14814 -0.15791 -0.16773 -0.17761 -0.18753 -0.1975 (XM-XN)2 0.01 0.014188 0.016574 0.019159 0.021945 0.024936 0.028135 0.031544 0.035167 0.039006

2(XM-XN)2 1.006956 1.009883 1.011554 1.013368 1.015328 1.017435 1.019693 1.022105 1.024675 1.027405 (2(XM-XN)2)1/4 1.001734 1.002462 1.002876 1.003325 1.00381 1.00433 1.004887 1.005481 1.006113 1.006782 28.8/(2(XM-XN)2)1/4 28.75014 28.72928 28.7174 28.70454 28.69069 28.67582 28.65993 28.643 28.62503 28.60599

ALPHA-M 110.32 106.576 104.704 102.832 100.96 99.088 97.216 95.344 93.472 91.6 RO-VALUES 5.62 5.471 5.3965 5.322 5.2475 5.173 5.0985 5.024 4.9495 4.875 M-VALUES 191.48 182.402 177.863 173.324 168.785 164.246 159.707 155.168 150.629 146.09 ALPHA-M*RO/M 3.237928 3.196661 3.1768 3.157508 3.138831 3.12082 3.103532 3.08703 3.071385 3.056677

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 8.16E+24 8.06E+24 8.01E+24 7.96E+24 7.91E+24 7.87E+24 7.83E+24 7.78E+24 7.74E+24 7.71E+24 1-(4PIN/3)*ALPHAM*RO/M 8.16E+24 8.06E+24 8.01E+24 7.96E+24 7.91E+24 7.87E+24 7.83E+24 7.78E+24 7.74E+24 7.71E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.63E+25 1.61E+25 1.6E+25 1.59E+25 1.58E+25 1.57E+25 1.57E+25 1.56E+25 1.55E+25 1.54E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.37507 14.36464 14.3587 14.35227 14.34534 14.33791 14.32996 14.3215 14.31251 14.303

Eg value 10.93863 10.42547 10.18124 9.94482 9.715908 9.494222 9.279487 9.071444 8.869841 8.674441

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 XN value 2.007519 2.01759 2.027712 2.037885 2.048108 2.058383 2.068709 2.079087 2.089517 2.1

(XM/XN)2 0.803944 0.795938 0.788011 0.780164 0.772395 0.764703 0.757088 0.749548 0.742084 0.734694 (XM-XN)2 0.043064 0.047346 0.051853 0.056589 0.061558 0.066762 0.072205 0.07789 0.08382 0.09

2(XM-XN)2 1.0303 1.033362 1.036595 1.040004 1.043592 1.047363 1.051322 1.055473 1.059821 1.06437 (2(XM-XN)2)1/4 1.00749 1.008238 1.009026 1.009854 1.010724 1.011636 1.012591 1.013589 1.014631 1.015718 28.8/(2(XM-XN)2)1/4 28.58588 28.56468 28.54238 28.51896 28.49442 28.46873 28.4419 28.41389 28.3847 28.35432

ALPHA-M 89.728 87.856 85.984 84.112 82.24 80.368 78.496 76.624 74.752 72.88 RO-VALUES 4.8005 4.726 4.6515 4.577 4.5025 4.428 4.3535 4.729 4.2045 4.13 M-VALUES 141.551 137.012 132.473 127.934 123.395 118.856 114.317 109.778 105.239 100.70 ALPHA-M*RO/M 3.042997 3.030446 3.01914 3.009213 3.000815 2.994123 2.98934 3.300797 2.986486 2.989021

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.67E+24 7.64E+24 7.61E+24 7.59E+24 7.57E+24 7.55E+24 7.54E+24 8.32E+24 7.53E+24 7.54E+24 1-(4PIN/3)*ALPHAM*RO/M 7.67E+24 7.64E+24 7.61E+24 7.59E+24 7.57E+24 7.55E+24 7.54E+24 8.32E+24 7.53E+24 7.54E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.53E+25 1.53E+25 1.52E+25 1.52E+25 1.51E+25 1.51E+25 1.51E+25 1.66E+25 1.51E+25 1.51E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.29294 14.28234 14.27119 14.25948 14.24721 14.23437 14.22095 14.20695 14.19235 14.17716

Eg value 8.485013 8.301339 8.123208 7.95042 7.78278 7.620105 7.462217 7.308947 7.160131 7.015613

Doping of P component in a Binary semiconductor like GaSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of GaPxSb1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future.

2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications.

2) Limited theoretical work on Electro Negativity values and Band Energy Gap of GaPxSb1-x III-V Ternary Semiconductors with in the Composition range of (0 3) Our results regarding the Electro Negativity values and Band Energy Gap of III-V Ternary Semiconductors are found to be in reasonable agreement with the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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