Study of AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap

Abstract: AlPxSb1-x III-V Ternary semiconductor is very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Property like Band Energy Gap. These Ternary Compounds can be derived from binary compounds AlP and AlSb by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represents the AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Keywords: Band Energy Gap, Composition, Electro Negativity, Molecular weight, density, optical polarizability.

Introduction: 1) In this opening talk of AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap Electronegativity values of Ternary Semiconductors are denoted by symbols XM and XN and Band Energy Gap is denoted by Eg

2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties.

3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.

4) In the present work, the solid solutions belonging to AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials.

5) Recently no other class of material of semiconductors has attracted so much scientific and commercial attention like the III-V Ternary compounds.

6) Doping of P component in a Binary semiconductor like AlSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

7) Thus effect of do pant increases the conductivity and decreases the Band Energy Gap and finds extensive applications

8) The present investigation relates Band Energy Gap and Electro Negativity with variation of composition for AlPxSb1-x III-V Ternary Semiconductor.

9) The fair agreement between calculated and reported values of Band Energy Gaps of AlP and AlSb Binary semiconductors give further extension of Band Energy Gaps for Ternary semiconductors.

10) The present work opens new line of approach to Band Energy Gap studies in AlPxSb1-x III-V Ternary Semiconductor

Objective: The main Objective of this paper is to calculate AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap values

Purpose: The purpose of study is AlPxSb1-x III-V Ternary Semiconductor Band Energy Gap and effect of concentration in Electro Negativity values of III-V Ternary Semiconductors to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of III-V ternary semiconductors and Band Energy Gap values in composition range (0 Theoretical Impact: Formula: Eg=[28.8/(2(XM-XN)2)1/4*(1-f12/1+2*f12)]POWER (XM/XN)2 Where:f12=[4pN/3]*[aM12*r12]/M12 Electro Negativity values of Elemental Semiconductors:

Compound Al Ga As In P Sb N E.N value 1.5 1.8 2 1.7 2.1 1.9 3

Electro Negativity values of AlPxSb1-x III-V Ternary Semiconductor X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5

Compound AlPxSb1-x XM value 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 XN value 1.9 1.919111 1.928739 1.938415 1.948139 1.957913 1.967735 1.977606 1.987528 1.997498 (XM/XN)2 0.623269 0.610917 0.604833 0.59881 0.592847 0.586943 0.581098 0.575311 0.569582 0.56391 (XM-XN)2 0.16 0.175654 0.183817 0.192208 0.200829 0.209684 0.218776 0.228108 0.237683 0.247505

2(XM-XN)2 1.117287 1.129477 1.135885 1.142511 1.149359 1.156435 1.163746 1.171298 1.179098 1.187152 (2(XM-XN)2)1/4 1.028114 1.030907 1.032366 1.033868 1.035414 1.037004 1.038639 1.04032 1.042047 1.043822 28.8/(2(XM-XN)2)1/4 28.01246 27.93658 27.89709 27.85656 27.81497 27.77232 27.7286 27.6838 27.6379 27.5909

ALPHA-M 105.41 101.444 99.461 97.478 95.495 93.512 91.529 89.546 87.563 85.58 RO-VALUES 4.22 4.04 3.95 3.86 3.77 3.68 3.59 3.5 3.41 3.32 M-VALUES 148.74 139.661 135.1215 130.582 126.0425 121.503 116.9635 112.424 107.8845 103.345 ALPHA-M*RO/M 2.990656 2.93449 2.907538 2.881447 2.856308 2.832228 2.80933 2.787759 2.767681 2.749292

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 7.54E+24 7.4E+24 7.33E+24 7.27E+24 7.2E+24 7.14E+24 7.08E+24 7.03E+24 6.98E+24 6.93E+24

1-(4PIN/3)*ALPHAM*RO/M 7.54E+24 7.4E+24 7.33E+24 7.27E+24 7.2E+24 7.14E+24 7.08E+24 7.03E+24 6.98E+24 6.93E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.51E+25 1.48E+25 1.47E+25 1.45E+25 1.44E+25 1.43E+25 1.42E+25 1.41E+25 1.4E+25 1.39E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 14.00623 13.96829 13.94854 13.92828 13.90749 13.88616 13.8643 13.8419 13.81895 13.79545

Eg value 5.181627 5.007113 4.923218 4.84147 4.761801 4.684148 4.608446 4.534637 4.462662 4.392464

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

Compound XM value 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 XN value 2.007519 2.01759 2.027712 2.037885 2.048108 2.058383 2.068709 2.079087 2.089517 2.1

(XM/XN)2 0.558294 0.552734 0.54723 0.54178 0.536385 0.531044 0.525755 0.52052 0.515336 0.510204 (XM-XN)2 0.257576 0.2679 0.27848 0.28932 0.300422 0.311791 0.32343 0.335342 0.347531 0.36 2(XM-XN)2 1.195468 1.204054 1.212916 1.222064 1.231505 1.241248 1.251302 1.261677 1.272381 1.283426

(2(XM-XN)2)1/4 1.045646 1.047518 1.04944 1.051413 1.053438 1.055516 1.057647 1.059832 1.062073 1.06437 28.8/(2(XM-XN)2)1/4 27.54279 27.49356 27.4432 27.3917 27.33905 27.28524 27.23027 27.17412 27.11678 27.05826

ALPHA-M 83.597 81.614 79.631 77.648 75.665 73.682 71.699 69.716 67.733 65.75 RO-VALUES 3.23 3.14 3.05 2.96 2.87 2.78 2.69 2.6 2.51 2.42 M-VALUES 98.8055 94.266 89.7265 85.187 80.6475 76.108 71.5185 67.029 62.4895 57.95 ALPHA-M*RO/M 2.732827 2.718562 2.706832 2.698042 2.692688 2.691385 2.696789 2.704227 2.720614 2.745729

TOTAL 4*PI*N 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 7.56E+24 4*PI*N/3 VALUES 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 2.52E+24 (4PIN/3)*ALPHAM*RO/M 6.89E+24 6.86E+24 6.83E+24 6.8E+24 6.79E+24 6.79E+24 6.8E+24 6.82E+24 6.86E+24 6.92E+24 #VALUE! 6.89E+24 6.86E+24 6.83E+24 6.8E+24 6.79E+24 6.79E+24 6.8E+24 6.82E+24 6.86E+24 6.92E+24 1+2*(4PIN/3)*ALPHAM*RO/M 1.38E+25 1.37E+25 1.37E+25 1.36E+25 1.36E+25 1.36E+25 1.36E+25 1.36E+25 1.37E+25 1.38E+25

1-phi12/1+phi12 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 28.8/(2(XM-XN)2)1/4*(1-phi12/1+2*phi12) 13.7714 13.74678 13.7216 13.69585 13.66953 13.64262 13.61513 13.58706 13.55839 13.52913

Eg value 4.32399 4.257188 4.192007 4.1284 4.066318 4.005717 3.946554 3.888786 3.832372 3.777274

Doping of P component in a Binary semiconductor like AlSb and changing the composition of do pant has actually resulted in lowering of Band Energy Gap.

Future Plans: 1) Current data set of Electro Negativity values of AlPxSb1-x III-V Ternary Semiconductors and Band Energy Gap values include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future.

2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications.

2) Limited theoretical work on Electro Negativity values and Band Energy Gap of AlPxSb1-x III-V Ternary Semiconductors with in the Composition range of (0 3) Our results regarding the Electro Negativity values and Band Energy Gap of III-V Ternary Semiconductors are found to be in reasonable agreement with the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors and Band Energy Gap is used for Electrical conduction of semiconductors. This phenomenon is used in Band Gap Engineering.

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

References: 1) IUPAC Gold Book internet edition: "Electronegativity".

2) Pauling, L. (1932). "The Nature of the Chemical Bond. IV. The Energy of Single Bonds and the Relative Electronegativity of Atoms". Journal of the American Chemical Society 54 (9): 3570–3582..

3) Pauling, Linus (1960). Nature of the Chemical Bond. Cornell University Press. pp. 88–107. ISBN 0801403332

. 4) Greenwood, N. N.; Earnshaw, A. (1984). Chemistry of the Elements. Pergamon. p. 30. ISBN 0-08-022057-6.

5) Allred, A. L. (1961). "Electronegativity values from thermochemical data". Journal of Inorganic and Nuclear Chemistry 17 (3–4): 215–221..

6) Mulliken, R. S. (1934). "A New Electroaffinity Scale; Together with Data on Valence States and on Valence Ionization Potentials and Electron Affinities". Journal of Chemical Physics 2: 782–793.. v 7) Mulliken, R. S. (1935). "Electronic Structures of Molecules XI. Electroaffinity, Molecular Orbitals and Dipole Moments". J. Chem. Phys. 3: 573–585..

8) Pearson, R. G. (1985). "Absolute electronegativity and absolute hardness of Lewis acids and bases". J. Am. Chem. Soc. 107: 6801..

9) Huheey, J. E. (1978). Inorganic Chemistry (2nd Edn.). New York: Harper & Row. p. 167.

10) Allred, A. L.; Rochow, E. G. (1958). "A scale of electronegativity based on electrostatic force". Journal of Inorganic and Nuclear Chemistry 5: 264..

11) Prasada rao., K., Hussain, O.Md., Reddy, K.T.R., Reddy, P.S., Uthana, S., Naidu, B.S. and Reddy, P.J., Optical Materials, 5, 63-68 (1996).

12) Ghosh, D.K., Samantha, L.K. and Bhar, G.C., Pramana, 23(4), 485 (1984).

13) CRC Handbook of Physics and Chemistry, 76th edition.

14) Sanderson, R. T. (1983). "Electronegativity and bond energy". Journal of the American Chemical Society 105: 2259

15) Murthy, Y.S., Naidu, B.S. and Reddy, P.J., “Material Science &Engineering,”B38, 175 (1991)

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