Telluride II-VI Ternary Semiconductors Electro Negativity values

Abstract: Telluride II-VI Ternary Semiconductors are very important as an x of a constituent in the semiconductor is going to have significant changes in calculating Physical Properties like Electro Negativity. These Ternary Compounds can be derived from binary compounds by replacing one half of the atoms in one sub lattice by lower valence atoms, the other half by higher valence atoms and maintaining average number of valence electrons per atom. The subscript X refers to the alloy content or concentration of the material, which describes proportion of the material added and replaced by alloy material. This paper represent the variation of the physical properties like Electro Negativity with Composition in Telluride II-VI Ternary Semiconductors.

Keywords: Electro Negativity, Composition, Tellurides, II-VI Ternary Semiconductors

Introduction: 1) In this opening talk of Electro Negativity values of Telluride II-VI Ternary Semiconductors, Electronegativity values of Ternary Semiconductors are denoted by symbols X1 and X2.

2) Linus Pauling first proposed Electro Negativity in 1932 as a development of valence bond theory,[2] it has been shown to correlate with a number of other chemical properties.

3) The continuous variation of physical properties like Electro Negativity of ternary compounds with relative concentration of constituents is of utmost utility in development of solid-state technology.

4) In the present work, the solid solutions belonging to Telluride II-VI Ternary Semiconductors have been investigated. In order to have better understanding of performance of these solid solutions for any particular application, it becomes quite necessary to work on the physical properties like Electro Negativity of these materials.

5) In the last few years no other class of material of semiconductors has attracted so much scientific and commercial attention like the II-VI Ternary compounds.

6) An atom's electronegativity is affected by both its atomic number and the distance that its valence electrons reside from the charged nucleus. The higher the associated electronegativity number, the more an element or compound attracts electrons towards it.

7) Electronegativity of Ternary Semiconductors cannot be directly measured and must be calculated from other atomic or molecular properties. Several methods of calculation have been proposed and, although there may be small differences in the numerical values of the electronegativity, all methods show the same periodic trends between elements.

8) In other methods of calculation, it is conventional to quote the results on a scale that covers the same range of numerical values: this is known as an electronegativity in Pauling units

9) Electronegativity of Ternary Compounds is usually calculated, is not strictly an atomic property, but rather a property of an atom in a molecule:[3]

10) The systematic approach to the preparation, characterization and study of Physical properties with applications of II-VI Ternary semiconductors have acquired a lot of importance.

Objective: The main Objective of this paper is to calculate Electro Negativity values of Telluride II-VI Ternary Semiconductors.

Purpose: The purpose of study is effect of concentration in Electro Negativity values of Telluride II-VI Ternary Semiconductors is to represent additivity principle even in very low concentration range. This paper includes Electro Negativity values of Telluride II-VI Ternary Semiconductors in composition range (0 Theoretical Impact:

Electro Negativity values of Elemental Semiconductors:

Compound Cd Zn Te Hg Se S E.N value 1.69 1.65 2.1 2 2.55 2.58

Electro Negativity values of Telluride II-VI Ternary Semiconductors:

1) CdxZn1-xTe Formulas: X1=(Cd (E.N) X)*(Zn (E.N) 1-X) X2=Te E.N E.N=Electro Negativity value

1) CdxZn1-xTe

E.N of Ternary Compounds X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound CdxZn1-xTe X1 value 1.65 1.653957 1.655939 1.657924 1.65991 1.6619 1.663891 1.665885 1.667881 1.66988 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Compound X1 value 1.671881 1.673885 1.675891 1.677899 1.67991 1.681923 1.683939 1.685957 1.687977 1.69 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 Similarly: 2) HgxCd1-xTe

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound HgxCd1-xTe X1 value 1.69 1.718704 1.733238 1.747895 1.762676 1.777582 1.792614 1.807774 1.823061 1.838478 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Compound X1 value 1.854025 1.869703 1.885514 1.901459 1.917539 1.933755 1.950107 1.966598 1.983229 2 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1

3) HgxZn1-xTe

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound HgxZn1-xTe X1 value 1.65 1.682049 1.698306 1.71472 1.731293 1.748025 1.76492 1.781978 1.799201 1.81659 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Compound X1 value 1.834148 1.851875 1.869773 1.887844 1.90609 1.924513 1.943113 1.961893 1.980855 2 X2 value 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1

4) CdSexTe1-x

X value 0 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 1-x value 1 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Compound CdSexTe1-x X1 value 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 X2 value 2.1 2.141171 2.162058 2.183149 2.204446 2.225951 2.247665 2.269591 2.291731 2.314087

X value 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1-x value 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Compound X1 value 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 1.69 X2 value 2.336661 2.359456 2.382472 2.405714 2.429181 2.452878 2.476806 2.500968 2.525365 2.55

Future Plans: 1) Current data set of Electro Negativity values of Telluride II-VI Ternary Semiconductors include the most recently developed methods and basis sets are continuing. The data is also being mined to reveal problems with existing theories and used to indicate where additional research needs to be done in future. 2) The technological importance of the ternary semiconductor alloy systems investigated makes an understanding of the phenomena of alloy broadening necessary, as it may be important in affecting semiconductor device performance.

Conclusion: 1) This paper needs to be addressed theoretically so that a fundamental understanding of the physics involved in such phenomenon can be obtained in spite of the importance of ternary alloys for device applications.

2) Limited theoretical work on Electro Negativity values of Telluride II-VI Ternary Semiconductors with in the Composition range of (03) Our results regarding the Electro Negativity values of Telluride II-VI Ternary Semiconductors are found to be in reasonable agreement with the experimental data

Results and Discussion: Electro Negativity values of Ternary Semiconductors is are used in calculation of Band Energy Gaps and Refractive indices of Ternary Semiconductors

Acknowledgments. – This review has benefited from V.R Murthy, K.C Sathyalatha contribution who carried out the calculation of physical properties for several ternary compounds with additivity principle. It is a pleasure to acknowledge several fruitful discussions with V.R Murthy.

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